LEVO SiC RTA

The Levitor LEVO SiC RTA is a single-wafer Rapid Thermal Annealing system specifically designed for Silicon Carbide (SiC) wafers. It utilizes conduction-based heating instead of traditional radiation heating, ensuring fast and efficient wafer heating and cooling. This enables precise temperature control from 100°C to 1200°C, delivering excellent uniformity, high throughput, and repeatability—crucial for SiC processing.

The LEVO SiC RTA supports annealing with Nitrogen (N₂), Argon (Ar), and Oxygen (O₂), making it ideal for advanced semiconductor manufacturing. It provides enhanced leak-tightness and an advanced control system, ensuring stable and consistent results. The conduction-based heating method is emissivity-independent, which is particularly beneficial for SiC wafers, where traditional RTA methods often struggle with uniform heat distribution.

With its fast heating and cooling cycles, the LEVO SiC RTA improves productivity and reduces processing costs, while maintaining the highest quality and reliability. Customers across Europe and Asia report significant benefits in precision, efficiency, and cost savings, making the LEVO SiC RTA the ultimate solution for manufacturers working with Silicon Carbide wafers.